5/16/2023 0 Comments Pt2399 simple delay circuit![]() ![]() For latch-up, modifications in the structure of IGBTs are proposed in, which has been applied in newer generations of IGBTs. The latch-up process occurs when the parasitic thyristor of the device is activated, and SCF current limiting of the IGBT malfunctions immediately. Toward enhancing the reliability of IGBT devices, there have been several attempts in the literature. Among serious failure modes during SCF condition, we can name latch-up, gate oscillation, self-turn off, thermal run away during the turn-off state, Negative Differential Resistance (NDR), and Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) mode. There are several further factors that may break the device in particular cases however, IGBT can withstand the SCF condition for a limited time, e.g., IGBTs can survive 10 μ s of SCF condition until it reaches thermal runaway. Short Circuit Faults (SCFs) are specially important as a frequent failure modes in the IGBT operation. IGBTs and capacitors are the components with 34% failure rates in the power converters. They are commonly used in traction systems, pulsed power supplies, HVDC circuit breakers, and solid-state transformers. Insulated Gate Bipolar Transistors (IGBTs) are one of the most important components in medium and high power converters. The results of this paper are validated through simulation and experiment. A simple control loop activates in the SCF condition and does not create slow transients for the IGBT. The extension of the permissible SCF time is achieved even for the cases with temporary arcs. With the proposed control approach, sudden temperature rise during SCF is controlled, preventing significant failure in IGBTs. Second, it reduces the SCF current to a value much less than the saturated current. This paper proposes a protection strategy to limit the junction temperature rise by limiting the SCF current by adding a small value resistor in the IGBT emitter. In Short Circuit Fault (SCF), as the most reported failures in IGBTs, drastic, sudden temperature rise, and peak SCF current are widespread failures owing to a relatively long delay of the protection subsystem. Like the widely-used semiconductor switch, Insulated Gate Bipolar Transistors (IGBTs) are subject to many failures and degradation in power electronic converters. ![]()
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